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4N36T PDF预览

4N36T

更新时间: 2024-11-07 20:19:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 输出元件光电
页数 文件大小 规格书
6页 276K
描述
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-6

4N36T 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:PLASTIC, DIP-6Reach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.67
Is Samacsys:N其他特性:UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min:30 V配置:SINGLE
当前传输比率-最小值:100%标称电流传输比:300%
最大暗电源:50 nA最大正向电流:0.06 A
最大正向电压:1.5 V最大绝缘电压:7500 V
JESD-609代码:e0安装特点:THROUGH HOLE MOUNT
元件数量:1最大通态电流:0.1 A
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER最大功率耗散:0.3 W
最长响应时间:0.00001 s子类别:Optocoupler - Transistor Outputs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

4N36T 数据手册

 浏览型号4N36T的Datasheet PDF文件第2页浏览型号4N36T的Datasheet PDF文件第3页浏览型号4N36T的Datasheet PDF文件第4页浏览型号4N36T的Datasheet PDF文件第5页浏览型号4N36T的Datasheet PDF文件第6页 
Order this document  
by 4N35/D  
SEMICONDUCTOR TECHNICAL DATA  
GlobalOptoisolator  
[CTR = 100% Min]  
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared  
emitting diode optically coupled to a monolithic silicon phototransistor detector.  
*Motorola Preferred Device  
Current Transfer Ratio — 100% Minimum @ Specified Conditions  
Guaranteed Switching Speeds  
STYLE 1 PLASTIC  
Meets or Exceeds all JEDEC Registered Specifications  
To order devices that are tested and marked per VDE 0884 requirements, the  
suffix ”V” must be included at end of part number. VDE 0884 is a test option.  
Applications  
6
1
General Purpose Switching Circuits  
Interfacing and coupling systems of different potentials and impedances  
Regulation Feedback Circuits  
STANDARD THRU HOLE  
CASE 730A–04  
Monitor & Detection Circuits  
Solid State Relays  
SCHEMATIC  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
Unit  
1
2
3
6
INPUT LED  
5
4
Reverse Voltage  
V
R
6
Volts  
mA  
Forward Current — Continuous  
I
F
60  
LED Power Dissipation @ T = 25°C  
with Negligible Power in Output Detector  
P
D
120  
mW  
A
PIN 1. LED ANODE  
2. LED CATHODE  
3. N.C.  
Derate above 25°C  
1.41  
mW/°C  
OUTPUT TRANSISTOR  
Collector–Emitter Voltage  
Emitter–Base Voltage  
4. EMITTER  
5. COLLECTOR  
6. BASE  
V
V
V
30  
7
Volts  
Volts  
Volts  
mA  
CEO  
EBO  
CBO  
Collector–Base Voltage  
Collector Current — Continuous  
70  
I
C
150  
150  
Detector Power Dissipation @ T = 25°C  
with Negligible Power in Input LED  
P
D
mW  
A
Derate above 25°C  
1.76  
mW/°C  
TOTAL DEVICE  
(1)  
Isolation Source Voltage  
(Peak ac Voltage, 60 Hz, 1 sec Duration)  
V
ISO  
7500  
Vac(pk)  
Total Device Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
250  
2.94  
mW  
mW/°C  
A
(2)  
Ambient Operating Temperature Range  
T
55 to +100  
55 to +150  
260  
°C  
°C  
°C  
A
(2)  
Storage Temperature Range  
T
stg  
Soldering Temperature (10 sec, 1/16from case)  
T
L
1. Isolation surge voltage is an internal device dielectric breakdown rating.  
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.  
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
GlobalOptoisolator is a trademark of Motorola, Inc.  
REV 2  
Motorola, Inc. 1995  

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