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4N23 PDF预览

4N23

更新时间: 2024-11-27 22:16:27
品牌 Logo 应用领域
MII 光电输出元件
页数 文件大小 规格书
4页 96K
描述
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS

4N23 数据手册

 浏览型号4N23的Datasheet PDF文件第2页浏览型号4N23的Datasheet PDF文件第3页浏览型号4N23的Datasheet PDF文件第4页 
4N22  
4N23  
4N24  
Mii  
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS  
Applications:  
OPTOELECTRONIC PRODUCTS  
DIVISION  
Features:  
Overall current gain...1.5 typical (4N24)  
Base lead provided for conventional transistor  
biasing  
Eliminate ground loops  
Level shifting  
Line receiver  
Rugged package  
Switching power supplies  
Motor control  
High gain, high voltage transistor  
+1kV electrical isolation  
DESCRIPTION  
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically  
sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN,  
JANS, JANTX and JANTXV quality levels.  
*ABSOLUTE MAXIMUM RATINGS  
Input to Output Voltage........................................................................................................................................................ ±1kV  
Emitter-Collector Voltage..........................................................................................................................................................4V  
Collector-Emitter Voltage (VCEO, I = 0)....................................................................................................................................35V  
F
Collector-Base Voltage (VCEO, I = 0) .......................................................................................................................................35V  
Reverse Input Voltage ............F.................................................................................................................................................2V  
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)....................................40mA  
Peak Forward Input Current (Value applies for tw < 1µs PRR < 300 pps) ..............................................................................1A  
Continuous Collector Current ..............................................................................................................................................50mA  
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................300mW  
Storage Temperature..........................................................................................................................................-65°C to +125°C  
Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C  
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds).............................................................................. 240°C  
Notes:  
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.  
2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C above 65°C.  
* JEDEC registered data  
Package Dimensions  
Schematic Diagram  
0.040 [1.02]  
MAX.  
C
E
3
1
6 LEADS  
5
6
0.305 [7.75]  
0.335 [8.51]  
A
0.045 [1.14]  
0.029 [0.73]  
3
7
5
0.022Ø [5.08]  
0.016Ø [0.41]  
0.019Ø [0.48]  
0.500 [12.70]  
2
1
MIN.  
45°  
0.155 [3.94]  
0.185 [4.70]  
0.034 [0.864]  
0.028 [0.711]  
B
K
2
7
TO5  
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)  
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918  
www.micropac.com E-MAIL: optosales@micropac.com  
3 - 7  

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