4N22A
Mii
4N23A JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
OPTOELECTRONIC PRODUCTS
DIVISION
4N24A
Features:
Applications:
•
•
•
Collector is electrically isolated from the case.
•
•
•
•
•
Eliminate ground loops
Overall current gain...1.5 typical (4N24A)
Base lead provided for conventional transistor
biasing
Level shifting
Line receiver
Switching power supplies
Motor control
•
•
•
Rugged package
High gain, high voltage transistor
+1kV electrical isolation
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications, as well as to MIL-PRF-19500
JAN, JANS, JANTX, and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage.............................................................................................................................................................±1kV
Emitter-Collector Voltage..............................................................................................................................................................4V
Collector-Emitter Voltage............................................................................................................................................................35V
Collector-Base Voltage...............................................................................................................................................................35V
Reverse Input Voltage .................................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1)....................................... 40mA
Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) .................................................................................1A
Continuous Collector Current ................................................................................................................................................. 50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................... 300mW
Storage Temperature............................................................................................................................................. -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................... -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds)..................................................................................240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C.
* JEDEC registered data
Package Dimensions
Schematic Diagram
0.040 [1.02]
MAX.
C
E
3
1
6 LEADS
5
6
0.305 [7.75]
0.335 [8.51]
A
0.045 [1.14]
0.029 [0.73]
3
7
5
0.022Ø [5.08]
0.016Ø [0.41]
0.019Ø [0.48]
0.500 [12.70]
2
1
MIN.
45°
0.155 [3.94]
0.185 [4.70]
0.034 [0.864]
0.028 [0.711]
B
K
2
7
TO5
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@microropac.com
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