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495220

更新时间: 2024-11-08 21:09:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网晶体管
页数 文件大小 规格书
2页 93K
描述
Power Bipolar Transistor, 4A I(C), 325V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

495220 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.83
最大集电极电流 (IC):4 A集电极-发射极最大电压:325 V
配置:DARLINGTON最小直流电流增益 (hFE):1000
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

495220 数据手册

 浏览型号495220的Datasheet PDF文件第2页 
April 2008  
495220  
NPN Epitaxial Silicon Darlington Transistor  
High Voltage & Medium Power Linear Application  
Equivalent Circuit  
C
B
TO-220  
1
Marking : 495220  
1.Base 2.Collector 3.Emitter  
E
Absolute Maximum Ratings * TC=25°C unless otherwise noted  
Symbol  
BVCBO  
BVCEO  
BVEBO  
IC  
Parameter  
Value  
Units  
Collector-Base Voltage  
550  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
325  
10  
V
Collector Current (DC)  
4
A
ICP  
Collector Current (Pulse)**  
Base Current (DC)  
6
0.5  
A
IB  
A
PC  
Collector Dissipation(TC=25°C)  
Junction Temperature  
40  
W
°C  
°C  
TJ  
150  
TSTG  
Storage Junction Temperature Range  
- 55 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
** Pulse Test : Pulse Width 5ms, Duty Cycle 10%  
Electrical Characteristics * TC=25°C unless otherwise noted  
Symbol  
Parameter  
Test Condition  
Min. Typ. Max. Units  
BVCEO(SUS) Collector-Emitter Sustaining Voltage  
IC=1.5A, IB = 0.05A, L = 25mH  
VCB = 550V, IE = 0  
250  
V
ICBO  
IEBO  
hFE  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
5
1
mA  
mA  
VEB=10V, IC=0  
VCE=5V, IC=0..5A  
VCE=5V, IC=3.0A  
5000  
1000  
VCE(sat)  
Collector-Emitter Saturation Voltage  
IC = 0.75A, IB = 0.17A  
IC = 2A, IB = 5mA  
1.7  
1.5  
V
V
VBE(sat)  
Base-Emitter Saturation Voltage  
IC = 2A, IB = 5mA  
2
V
* Pulse Test : Pulse Width 5ms, Duty Cycle 10%  
© 2008 Fairchild Semiconductor Corporation  
495220 Rev. A1  
www.fairchildsemi.com  
1

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