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495220TU

更新时间: 2024-11-08 12:52:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管达林顿晶体管
页数 文件大小 规格书
2页 99K
描述
NPN Epitaxial Silicon Darlington Transistor

495220TU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.81
最大集电极电流 (IC):4 A配置:2 BANKS, DARLINGTON
最小直流电流增益 (hFE):5000最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):40 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

495220TU 数据手册

 浏览型号495220TU的Datasheet PDF文件第2页 
April 2008  
495220  
NPN Epitaxial Silicon Darlington Transistor  
High Voltage & Medium Power Linear Application  
Equivalent Circuit  
C
B
TO-220  
1
Marking : 495220  
1.Base 2.Collector 3.Emitter  
E
Absolute Maximum Ratings * TC=25°C unless otherwise noted  
Symbol  
BVCBO  
BVCEO  
BVEBO  
IC  
Parameter  
Value  
Units  
Collector-Base Voltage  
550  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
325  
10  
V
Collector Current (DC)  
4
A
ICP  
Collector Current (Pulse)**  
Base Current (DC)  
6
0.5  
A
IB  
A
PC  
Collector Dissipation(TC=25°C)  
Junction Temperature  
40  
W
°C  
°C  
TJ  
150  
TSTG  
Storage Junction Temperature Range  
- 55 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
** Pulse Test : Pulse Width 5ms, Duty Cycle 10%  
Electrical Characteristics * TC=25°C unless otherwise noted  
Symbol  
Parameter  
Test Condition  
Min. Typ. Max. Units  
BVCEO(SUS) Collector-Emitter Sustaining Voltage  
IC=1.5A, IB = 0.05A, L = 25mH  
VCB = 550V, IE = 0  
250  
V
ICBO  
IEBO  
hFE  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
5
1
mA  
mA  
VEB=10V, IC=0  
VCE=5V, IC=0..5A  
VCE=5V, IC=3.0A  
5000  
1000  
VCE(sat)  
Collector-Emitter Saturation Voltage  
IC = 0.75A, IB = 0.17A  
IC = 2A, IB = 5mA  
1.7  
1.5  
V
V
VBE(sat)  
Base-Emitter Saturation Voltage  
IC = 2A, IB = 5mA  
2
V
* Pulse Test : Pulse Width 5ms, Duty Cycle 10%  
© 2008 Fairchild Semiconductor Corporation  
495220 Rev. A1  
www.fairchildsemi.com  
1

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