Datasheet > 4879279

4879279

更新时间： 2024-11-13 22:51:27

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	1002K
描述
KIT TVS DIODE 3000W BI-DIR SMC

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4879279 数据手册

TVS Diodes

Surface Mount – 3000W > SMDJ series

Pb e3

RoHS

SMDJ Series

Description

Uni-directional

The SMDJ series is designed specifically to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Features

• 3000W P_PPMcapability

at 10/1000μs waveform,

repetition rate (duty

cycles):0.01%

• Low incremental

surge resistance

• Typical I_Rless than 2μA when

V_BRmin>12V

Bi-directional

• For surface mounted

applications in order to

optimize board space

• High temperature to reﬂow

soldering guaranteed:

260°C/30sec

• V_BR@T_J= V_BR@25°C x (1+αT

x (T_J- 25))(αT:Temperature

Coefﬁcient, typical

Agency Approvals

Agency

• Low proﬁle package

Agency File Number

E230531

• Typical failure mode is short

from over-speciﬁed voltage or

current

value is 0.1%)

• Whisker test is conducted

based on JEDEC JESD201A

per its table 4a and 4c

• UL Recognized compound

meeting ﬂammability rating

V-0

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

• IEC-61000-4-2 ESD 30kV(Air), • Meet MSL level1, per

Parameter

Symbol

Value

Unit

30kV (Contact)

• ESD protection of data lines

in accordance with

J-STD-020, LF maximun peak

of 260°C

Peak Pulse Power Dissipation(Fig.2)

by 10/1000usTest Waveform(Fig.4) (Note

1),(Note 2) -Single Die Parts

P_PPM

3000

• Matte tin lead–free plated

IEC 61000-4-2

• EFT protection of data lines in

accordance with

IEC 61000-4-4

• Built-in strain relief

• Halogen free and

RoHS compliant

• Pb-free E3 means 2nd level

interconnect is Pb-free and

the terminal ﬁnish material is

tin(Sn) (IPC/JEDEC J-STD-

609A.01)

Peak Pulse Power Dissipation(Fig.2)

by 10/1000usTest Waveform(Fig.4) (Note

1), (Note 2) -Stacked Die Parts (Note 5)

P_PPM

4000

Power Dissipation on Inﬁnite Heat Sink

atT_L=50^OC

P_D

6.5

• Glass passivated chip junction

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

I_FSM

300

• Fast response time: typically

less than 1.0ps from

0V to BV min

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only(Note 4)

V_F

3.5/5.0

• Excellent clamping capability

-65 to

150

OperatingTemperature Range

StorageTemperature Range

T_J

°C

-65 to

175

T_STG

R_ƟJL

R_ƟJA

Applications

TypicalThermal Resistance Junction to

Lead

°C/W

TVS components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

telecom, computer, Industrial and consumer electronic

applications.

TypicalThermal Resistance Junction to

Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

component only, duty cycle=4 per minute maximum.

4. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

5. For stacked die component details, please refer to part numbers labeled by * in Electrical

Characteristics.

Additional Infomarion

Functional Diagram

Bi-directional

Dꢀꢁꢀsꢂeeꢁ

Sꢀꢁꢂꢃes

ꢀesoꢁꢂꢃes

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: JC.10/29/20

12 3 4 5 6

中文翻译

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