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4273-52

更新时间: 2024-11-14 03:00:43
品牌 Logo 应用领域
PSEMI 开关光电二极管
页数 文件大小 规格书
10页 200K
描述
SPDT Broadband UltraCMOS⑩ DC - 3 GHz RF Switch

4273-52 数据手册

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Product Specification  
PE4273  
SPDT Broadband UltraCMOS™  
DC – 3 GHz RF Switch  
Product Description  
The PE4273 RF Switch is designed for the TV tuner, PCTV, set  
top box, DTV, DVR and general broadband applications. This  
device offers industry leading broadband linearity, 1.5 kV ESD  
tolerance and a simple CMOS interface. It offers a simple  
alternative solution to pin diode and mechanical relay switches.  
Features  
Single-pin or complementary CMOS logic  
control inputs  
High ESD tolerance of 1.5 kV  
Low insertion loss: 0.50 dB at 1000 MHz,  
The PE4273 SPDT Broadband RF Switch is manufactured on  
Peregrine’s UltraCMOS™ process, a patented variation of  
silicon-on-insulator (SOI) technology on a sapphire substrate,  
offering the performance of GaAs with the economy and  
integration of conventional CMOS.  
0.65 dB at 2000 MHz  
Isolation of 34.5 dB at 1000 MHz, 25 dB at  
2000 MHz  
Typical input 1 dB compression point of  
+32 dBm  
Ultra-small SC-70 package  
Figure 1. Functional Diagram  
RFC  
Figure 2. Package Type  
6-lead SC-70  
RF1  
RF2  
CMOS  
Control  
Driver  
V1  
V2  
Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 75 )  
Parameter  
Conditions  
Units  
Min  
Max  
Typical  
Operation Frequency1  
DC - 3000  
1000 MHz  
MHz  
dB  
DC  
3000  
0.50  
0.65  
0.60  
0.75  
Insertion Loss  
2000 MHz  
1000 MHz  
dB  
dB  
32.5  
23  
34.5  
25  
Isolation (RFC - RF1/RF2)  
Isolation (RF1 - RF2)  
Return Loss  
2000 MHz  
1000 MHz  
dB  
dB  
38.5  
26  
40.5  
28  
2000 MHz  
1000 MHz  
dB  
dB  
18.5  
14  
2000 MHz  
dB  
‘ON’ Switching Time3  
‘OFF’ Switching Time3  
Video Feedthrough2,3  
Input 1 dB Compression3  
Input IP33  
50% CTRL to 0.1 dB of final value, 1 GHz  
50% CTRL to 25 dB isolation, 1 GHz  
µs  
0.725  
0.625  
< 2  
1.5  
1.3  
µs  
mVpp  
dBm  
dBm  
30  
32  
1000 MHz  
53  
1000 MHz, 19 dBm input power  
Notes:  
1. Device linearity will begin to degrade below 10 MHz.  
2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth.  
3. Measured in a 50 system.  
Document No. 70-0174-03 www.psemi.com  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Page 1 of 10  

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