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40CTQ150STRL PDF预览

40CTQ150STRL

更新时间: 2024-11-02 06:26:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 128K
描述
Schottky Rectifier, 2 x 20 A

40CTQ150STRL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.29其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.71 V
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
最大非重复峰值正向电流:1500 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):225
认证状态:Not Qualified最大重复峰值反向电压:150 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

40CTQ150STRL 数据手册

 浏览型号40CTQ150STRL的Datasheet PDF文件第2页浏览型号40CTQ150STRL的Datasheet PDF文件第3页浏览型号40CTQ150STRL的Datasheet PDF文件第4页浏览型号40CTQ150STRL的Datasheet PDF文件第5页浏览型号40CTQ150STRL的Datasheet PDF文件第6页 
40CTQ150S/40CTQ150-1  
Vishay High Power Products  
Schottky Rectifier, 2 x 20 A  
FEATURES  
• 175 °C TJ operation  
40CTQ150-1  
40CTQ150S  
• Center tap TO-220 package  
• Very low forward voltage drop  
• High frequency operation  
Base  
Base  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
common  
cathode  
common  
cathode  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified for industrial level  
2
2
1
1
3
3
Common  
Common  
DESCRIPTION  
cathode  
Anode  
Anode  
Anode  
Anode  
cathode  
The 40CTQ... center tap Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. The proprietary barrier technology allows for  
reliable operation up to 175 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
D2PAK  
TO-262  
PRODUCT SUMMARY  
IF(AV)  
2 x 20 A  
150 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
40  
UNITS  
Rectangular waveform  
A
V
150  
tp = 5 µs sine  
1500  
A
VF  
20 Apk, TJ = 125 °C (per leg)  
0.71  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
40CTQ150S  
40CTQ150-1  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
150  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 140 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
20  
40  
IF(AV)  
per device  
A
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
VRRM applied  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
1500  
IFSM  
250  
1.0  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.5  
Document Number: 93963  
Revision: 21-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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