Datasheet > 402CS-23NXGL

402CS-23NXGL

更新时间： 2024-11-09 07:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		放大器
页数	文件大小	规格书
18页	547K
描述
Enhancement Mode pHEMT Technology (E-pHEMT) High Linearity Amplifier

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402CS-23NXGL 数据手册

Document Number: MMG20271H

Rev. 0, 12/2010

Freescale Semiconductor

Technical Data

Enhancement Mode pHEMT

Technology (E--pHEMT)

MMG20271HT1

High Linearity Amplifier

The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed

in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,

TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the

1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can

be utilized as a driver amplifier in the transmit chain and as a second stage LNA

in the receive chain.

1500--2700 MHz, 16 dB

27.5 dBm

Features

E--pHEMT

•

Frequency: 1500--2700 MHz

Noise Figure: 1.7 dB @ 2140 MHz

P1dB: 27.5 dBm @ 2140 MHz

Small--Signal Gain: 16 dB @ 2140 MHz

Third Order Output Intercept Point: 42 dBm @ 2140 MHz

Single 5 Volt Supply

Supply Current: 180 mA

CASE 2131--01

QFN 3x3

50 Ohm Operation (some external matching required)

Low Cost QFN Surface Mount Package

RoHS Compliant

PLASTIC

In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

1500 2140 2700

Symbol MHz MHz MHz Unit

Characteristic

400

Noise Figure

2.0

1.7

1.9

Supply Current

dBm

°C

Input Return Loss

(S11)

IRL

-- 1 6

-- 1 4

-- 1 7

RF Input Power

Storage Temperature Range

stg

--65 to +150

150

Output Return Loss

(S22)

ORL

-- 2 0

-- 2 2

-- 1 7

(2)

Junction Temperature

°C

2. For reliable operation, the junction temperature should not

Small--Signal Gain

(S21)

exceed 150°C.

Power Output @

1dB Compression

P1db

IIP3

27.5

dBm

Third Order Input

Intercept Point

Third Order Output

Intercept Point

OIP3

1. V = 5 Vdc, T = 25°C, 50 ohm system, application circuit tuned

for specified frequency.

Table 3. Thermal Characteristics

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 96°C, 5 Vdc, 190 mA, no RF applied

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMG20271HT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...18

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