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3SF4 PDF预览

3SF4

更新时间: 2024-10-30 03:00:03
品牌 Logo 应用领域
商升特 - SEMTECH 整流二极管软恢复二极管快速软恢复二极管
页数 文件大小 规格书
5页 183K
描述
Axial Leaded Hermetically Sealed Fast Rectifier Diode

3SF4 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:HERMETIC SEALED, G4, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.27Is Samacsys:N
应用:FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:O-XALF-W2JESD-609代码:e0
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:4.5 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
参考标准:MIL-19500最大重复峰值反向电压:400 V
最大反向电流:1 µA最大反向恢复时间:0.15 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

3SF4 数据手册

 浏览型号3SF4的Datasheet PDF文件第2页浏览型号3SF4的Datasheet PDF文件第3页浏览型号3SF4的Datasheet PDF文件第4页浏览型号3SF4的Datasheet PDF文件第5页 
1N5415 THRU 1N5420  
3SF05 THRU 3SF6  
Axial Leaded Hermetically Sealed  
Fast Rectifier Diode  
POWER DISCRETES  
Description  
Features  
Quick reference data  
‹ Very low reverse recovery time  
‹ Hermetically sealed in fused metal oxide  
‹ Low switching losses  
‹ Low forward voltage drop  
‹ Soft, non-snap off, recovery characteristics  
VR = 50 - 600V  
IF 4.5A  
=
trr = 150 - 400nS  
IR = 1.0µA  
These products are qualified to MIL-PRF-19500/411.  
They can be supplied fully released as JAN, JANTX, and  
JANTXV versions.  
Absolute Maximum Ratings  
Electrical specifications @ TA = 25°C unless otherwise specified.  
1N5415 1N5416 1N5417  
1N5418 1N5419 1N5420  
Symbol  
3SF05  
Units  
3SF1  
100  
3SF2  
200  
3SF4  
400  
3SF5  
500  
3SF6  
600  
Working Reverse Voltage  
Repetitive Reverse Voltage  
VRWM  
VRRM  
50  
50  
V
V
100  
200  
400  
500  
600  
Average Forward Current  
@ 55°C in free air, lead length  
0.375"  
IF(AV)  
4.5  
25  
A
A
Repetitive Surge Current  
@ 55°C in free air, lead length  
0.375"  
IFRM  
Non-Repetitive Surge Current  
(tp = 8.3mS @ VR & TJMAX  
)
IFSM  
80  
A
(tp = 8.3mS, @ VR & 25°C)  
Storage Temperature Range  
150  
TSTG  
-65 to +175  
°C  
Revision: October 4, 2007  
1
www.semtech.com  

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