是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | D2PAK | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
风险等级: | 5.6 | Is Samacsys: | N |
雪崩能效等级(Eas): | 180 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 900 V | 最大漏极电流 (Abs) (ID): | 3 A |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 4.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 90 W |
最大脉冲漏极电流 (IDM): | 10 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
3N90-TA3-T | UTC |
获取价格 |
Transistor | |
3N90Z | UTC |
获取价格 |
3 Amps, 900 Volts N-CHANNEL POWER MOSFET | |
3N90ZG-TF1-T | UTC |
获取价格 |
3 Amps, 900 Volts N-CHANNEL POWER MOSFET | |
3N90ZL-TF1-T | UTC |
获取价格 |
3 Amps, 900 Volts N-CHANNEL POWER MOSFET | |
3N91 | NJSEMI |
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NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS | |
3N92 | NJSEMI |
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NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS | |
3N93 | NJSEMI |
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NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS | |
3N94 | NJSEMI |
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NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS | |
3N95 | NJSEMI |
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NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS | |
3NCB58R3E | OHMITE |
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Fixed Resistor, Wire Wound, 3W, 58.3ohm, 450V, 0.1% +/-Tol, -30,30ppm/Cel, |