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3N90L-TQ2-R PDF预览

3N90L-TQ2-R

更新时间: 2024-11-24 07:41:35
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
6页 218K
描述
3 Amps, 900 Volts N-CHANNEL POWER MOSFET

3N90L-TQ2-R 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
风险等级:5.6Is Samacsys:N
雪崩能效等级(Eas):180 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:4.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):90 W
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

3N90L-TQ2-R 数据手册

 浏览型号3N90L-TQ2-R的Datasheet PDF文件第2页浏览型号3N90L-TQ2-R的Datasheet PDF文件第3页浏览型号3N90L-TQ2-R的Datasheet PDF文件第4页浏览型号3N90L-TQ2-R的Datasheet PDF文件第5页浏览型号3N90L-TQ2-R的Datasheet PDF文件第6页 
UNISONIC TECHNOLOGIES CO., LTD  
3N90  
Power MOSFET  
3 Amps, 900 Volts N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
The UTC 3N90 provides excellent RDS(ON), low gate charge and  
operation with low gate voltages. This device is suitable for use as a  
load switch or in PWM applications.  
„
FEATURES  
* RDS(ON)=4.1@VGS=10 V  
* Ultra Low Gate Charge ( typical 22.7 nC )  
* Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF )  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, High Ruggedness  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
3
3N90L-TA3-T  
3N90L-TF3-T  
3N90L-TQ2-T  
3N90L-TQ2-R  
3N90G-TA3-T  
3N90G-TF3-T  
3N90G-TQ2-T  
3N90G-TQ2-R  
TO-220  
TO-220F  
TO-263  
TO-263  
G
G
G
G
D
D
D
D
S
Tube  
Tube  
S
S
S
Tube  
Tape Reel  
www.unisonic.com.tw  
Copyright © 2010 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-290.A  

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