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3N80-TF3-T PDF预览

3N80-TF3-T

更新时间: 2024-11-05 06:15:59
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 200K
描述
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET

3N80-TF3-T 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:N雪崩能效等级(Eas):170 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (ID):3 A
最大漏源导通电阻:4.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

3N80-TF3-T 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
3N80  
Preliminary  
Power MOSFET  
2.5 Amps, 800 Volts  
N-CHANNEL POWER MOSFET  
„
DESCRIPTION  
The UTC 3N80 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use as a load switch or in PWM  
applications.  
„
FEATURES  
* RDS(ON)=3.8@VGS=10 V  
* Ultra low gate charge ( typical 19 nC )  
* Low reverse transfer capacitance ( CRSS = typical 11 pF )  
* Fast switching capability  
Lead-free:  
Halogen-free: 3N80G  
3N80L  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
2.Drain  
3.Gate  
1.Source  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
3N80L-TA3-T  
3N80L-TF3-T  
Halogen Free  
3N80G-TA3-T  
3N80G-TF3-T  
1
2
D
D
3
S
S
3N80-TA3-T  
3N80-TF3-T  
TO-220  
G
G
Tube  
Tube  
TO-220F  
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-283,a  

3N80-TF3-T 替代型号

型号 品牌 替代类型 描述 数据表
3N80G-TF1-T UTC

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3 Amps, 800 Volts N-CHANNEL POWER MOSFET
3N80L-TF3-T UTC

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2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET

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