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3N259-M4/51 PDF预览

3N259-M4/51

更新时间: 2024-11-13 21:20:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 94K
描述
Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, KBPM, 4 PIN

3N259-M4/51 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSIP-W4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.68其他特性:UL RECOGNIZED
最小击穿电压:1000 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-W4
最大非重复峰值正向电流:60 A元件数量:4
相数:1端子数量:4
最高工作温度:165 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:1000 V
表面贴装:NO端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

3N259-M4/51 数据手册

 浏览型号3N259-M4/51的Datasheet PDF文件第2页浏览型号3N259-M4/51的Datasheet PDF文件第3页浏览型号3N259-M4/51的Datasheet PDF文件第4页 
2KBP005M thru 2KBP10M, 3N253 thru 3N259  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• UL recognition file number E54214  
• Ideal for printed circuit board  
e4  
• High surge current capability  
• High case dielectric strength  
~
+
~
~
• Solder dip 260 °C, 40 s  
~
+
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Case Style KBPM  
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for switching power supply, home  
appliances, office equipment, and telecommunication  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 A  
VRRM  
IFSM  
IR  
50 V to 1000 V  
60 A  
MECHANICAL DATA  
Case: KBPM  
5 µA  
VF  
1.1 V  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
165 °C  
Terminals: Silver plated leads, solderable per  
J-STD-002 and JESD22-B102  
E4 suffix for consumer grade  
Polarity: As marked on body  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
2KBP  
005M  
2KBP  
01M  
2KBP  
02M  
2KBP  
04M  
2KBP  
06M  
2KBP  
08M  
2KBP  
10M  
PARAMETER  
SYMBOL  
UNIT  
3N253 3N254 3N255 3N256 3N257 3N258 3N259  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Max. average forward output rectified current  
at TA = 55 °C  
IF(AV)  
2.0  
A
Peak forward surge current single half  
sine-wave superimposed on rated load  
IFSM  
I2t  
60  
15  
A
Rating for fusing (t < 8.3 ms)  
A2s  
°C  
Operating junction and  
storage temperature range  
TJ, TSTG  
- 55 to + 165  
Document Number: 88532  
Revision: 15-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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