3N246

更新时间： 2024-11-17 22:14:31

品牌	Logo	应用领域
威世 - VISHAY		整流二极管桥式整流二极管
页数	文件大小	规格书
2页	82K
描述
GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

3N246 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	配置：	BRIDGE, 4 ELEMENTS
二极管类型：	BRIDGE RECTIFIER DIODE	最大正向电压 (VF)：	1.3 V
最大非重复峰值正向电流：	30 A	元件数量：	4
最高工作温度：	150 °C	最大输出电流：	1 A
最大重复峰值反向电压：	50 V	子类别：	Bridge Rectifier Diodes
表面贴装：	NO	Base Number Matches：	1

3N246 数据手册

KBP005M THRU KBP10M

3N246 THRU 3N252

GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE

Reverse Voltage - 50 to 1000 Volts

Forward Current - 1.5 Amperes

Case Style KBPM

FEATURES

♦ Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

0.600 (15.24)

0.560 (14.22)

0.125 x 45^o

(3.2)

♦ This series is UL listed under Recognized Component Index,

file number E54214

♦ Glass passivated chip junctions

0.460 (11.68)

0.420 (10.67)

0.500 (12.70)

0.460 (11.68)

♦ High surge current capability

♦ Ideal for printed circuit board

♦ High temperature soldering guaranteed:

260°C/10 seconds at 5 lbs. (2.3kg) tension

0.50

(12.7)

MIN.

(15.2)

MIN.

0.060

(1.52)

0.034 (8.6)

0.160 (4.1)

0.140 (3.6)

0.028 (7.6)

DIA.

MECHANICAL DATA

Case: Molded plastic body over passivated junctions

Terminals: Plated lead solderable per MIL-STD-750,

Method 2026

0.105 (2.67)

0.085 (2.16)

0.200 (5.08)

0.180 (4.57)

Polarity: Polarity symbols marked on case

Mounting position: Any

Polarity shown on front side of case: positive lead by beveled corner

Weight: 0.06 ounce, 1.7 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

KBP

005M

KBP

01M

KBP

02M

KBP

04M

KBP

06M

KBP

08M

KBP

10M

SYMBOLS 3N246 3N247 3N248 3N249 3N250 3N251 3N252 UNITS

* Maximum repetitive peak reverse voltage

* Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

1.5

600

420

600

800 1000 Volts

560 700 Volts

800 1000 Volts

Amps

* Maximum DC blocking voltage

100

Maximum average forward output rectified current at T_A=40°C

I_(AV)

* Peak forward surge current single half sine-wave

superimposed on rated load (JEDEC Method)

Rating for fusing (t < 8.3ms)

50.0

30.0

I_FSM

I²t

Amps

A²sec

Volts

T_J=150°C

10.0

* Maximum instantaneous forward voltage drop

at 1.0A per leg

1.57A per leg

1.0

1.3

V_F

* Maximum DC reverse current

at rated DC blocking voltage per leg

T_A=25°C

T_A=125°C

5.0

500.0

I_R

µA

Typical junction capacitance per leg _{(NOTE 1)}

Typical thermal resistance per leg _{(NOTE 2)}

C_J

15.0

R_ΘJA

R_ΘJL

40.0

13.0

°C/W

°C

* Operating junction and storage temperature range

T_J, T_STG

-55 to +150

NOTES:

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x12mm) copper pads

* JEDEC registered values

4/98

中文翻译

下载PDF

3N246 替代型号

型号	品牌	替代类型	描述	数据表
KBP005G	DIODES	功能相似	1.5A GLASS PASSIVATED BRIDGE RECTIFIER
GBU4J	DIOTEC	功能相似	Silicon-Bridge Rectifiers
GBU4K	DIOTEC	功能相似	Silicon-Bridge Rectifiers

与3N246相关器件

型号	品牌	获取价格	描述	数据表
3N246_08	VISHAY	获取价格	Glass Passivated Single-Phase Bridge Rectifier
3N246-1	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 1.5A, 50V V(RRM), Silicon, PLASTIC, CASE KBPM, 4 PIN
3N246-1-E4	VISHAY	获取价格	DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBPM, 4 PIN, Bridge Rectifier
3N246E4	VISHAY	获取价格	暂无描述
3N246-E4/45	VISHAY	获取价格	Diode Rectifier Bridge Single 50V 1.5A 4-Pin Case KBPM Tube
3N246-E4/51	VISHAY	获取价格	Diode Rectifier Bridge Single 50V 1.5A 4-Pin Case KBPM Bulk
3N247	FAIRCHILD	获取价格	Bridge Rectifiers
3N247	VISHAY	获取价格	GLASS PASSIVATED SINGLE-PHASE RECTIFIER BRIDGE
3N247	CENTRAL	获取价格	Bridge Rectifier Diode, 1A, 100V V(RRM),
3N247	NJSEMI	获取价格	Diode Rectifier Bridge Single 100V 1.5A 4-Pin Case KBPM

与3N246相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

3N246

3N246 技术参数

3N246 数据手册

3N246 替代型号

与3N246相关器件

与3N246相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

3N246

3N246 技术参数

3N246 数据手册

3N246 替代型号

与3N246相关器件

与3N246相关文章

您还可以找

您在本页遇到什么问题？