生命周期: | Transferred | 包装说明: | CP, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.22 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 0.15 A | 最大漏极电流 (ID): | 0.15 A |
最大漏源导通电阻: | 3.7 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.25 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
3LN01C_12 | SANYO | General-Purpose Switching Device Applications |
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3LN01C-T-BE | ONSEMI | TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal |
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3LN01C-TB-E | SANYO | General-Purpose Switching Device Applications |
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3LN01C-TB-E | ONSEMI | 小信号 MOSFET,30V,150mA,3.7 Ω,单 N 沟道,CP |
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3LN01C-TB-H | SANYO | General-Purpose Switching Device Applications |
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3LN01C-TB-H | ONSEMI | 小信号 MOSFET,30V,150mA,3.7 Ω,单 N 沟道,CP |
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