3KP64C-B

更新时间： 2024-10-30 13:04:35

品牌	Logo	应用领域
力特 - LITTELFUSE		瞬态抑制器二极管局域网
页数	文件大小	规格书
5页	134K
描述
TVS DIODE

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中文翻译

获取价格

技术参数
数据手册
替代型号

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3KP64C-B 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.67
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	MATTE TIN	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

3KP64C-B 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 3000W > 3KP series

RoHS

3KP Series

Description

The 3KP Series is designed speciﬁcally to protect sensitive

electronic equipment from voltage transients induced by

lightning and other transient voltage events.

Features

tꢀ)BMPHFOꢁ'SFF

tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ

resistance

tꢀ 3P)4ꢀDPNQMJBOU

tꢀ 5ZQJDBMꢀ*_Rless than 2μA

above 12V

tꢀ 5ZQJDBMꢀNBYJNVNꢀ

temperature coefﬁcient

ΔV_BR= 0.1% x V_BR@25°C x ΔT tꢀ )JHIꢀUFNQFSBUVSFꢀ

soldering guaranteed:

Agency Approvals

tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ

260°C/40 seconds / 0.375”,

(9.5mm) lead length, 5

lbs., (2.3kg) tension

tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ

Underwriters Laboratory

Flammability classiﬁcation

94V-O

junction in P600 package

AGENCY

AGENCY FILE NUMBER

E230531

tꢀ ꢂꢃꢃꢃ8ꢀQFBLꢀQVMTFꢀ

capability at 10×1000μs

waveform, repetition rate

(duty cycles):0.01%

tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ

typically less than 1.0ps

from 0 Volts to BV min

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀQMBUFE

tꢀ &YDFMMFOUꢀDMBNQJOHꢀ

capability

Parameter

Symbol

P_PPM

Value

3000

Unit

Peak Pulse Power Dissipation by

10x1000μs test waveform (Fig.1)

(Note 1)

Applications

Steady State Power Dissipation on

iniﬁnite heat sink atT_L=75ºC (Fig. 5)

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

P_D

7. 0

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

only (Note 2)

I_FSM

300

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

only (Note 3)

V_F

3.5/5.0

Operating Junction and Storage

Temperature Range

T , T_STG-55 to 175

°C

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

8.0

°C/W

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 3 and derated aboveT_A= 25^OC per Fig. 2.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F<3.5V for devices of V_BR<_ 200V and V_F<5.0V for devices of V_BR>_ 201V.

Revision: January 09, 2009

3KP Series

Speciﬁcations are subject to change without notice.

Please refer to http://www.Littelfuse.com/series/3KP.html for current information.

12 3 4 5

中文翻译

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3KP64C-B 替代型号

型号	品牌	替代类型	描述	数据表
5KP64CA-B	LITTELFUSE	功能相似	Transient Voltage Suppression Diodes

与3KP64C-B相关器件

型号	品牌	获取价格	描述	数据表
3KP64C-B-BP	MCC	获取价格	3000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, R-6, 2 PIN
3KP64C-BP	MCC	获取价格	暂无描述
3KP64C-BP-HF	MCC	获取价格	暂无描述
3KP64C-B-TP	MCC	获取价格	DIODE 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, R-6, 2 PIN, Transient Suppressor
3KP64C-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 64V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
3KP64CP	MCC	获取价格	DIODE 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, R-6, 2 PIN, Transient Suppressor
3KP64C-T3	WTE	获取价格	Trans Voltage Suppressor Diode, 3000W, 64V V(RWM), Unidirectional, 1 Element, Silicon, PLA
3KP64C-T3-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 3000W, 64V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
3KP64-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 3000W, 64V V(RWM), Unidirectional, 1 Element, Silicon, ROH
3KP64-T	MCC	获取价格	Trans Voltage Suppressor Diode, 3000W, 64V V(RWM), Unidirectional, 1 Element, Silicon, PLA

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