Datasheet > 3KASMC16HE3/57T

3KASMC16HE3/57T

更新时间： 2024-11-14 15:27:51

品牌	Logo	应用领域
威世 - VISHAY		局域网光电二极管
页数	文件大小	规格书
5页	85K
描述
Trans Voltage Suppressor Diode, 3000W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

3KASMC16HE3/57T 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DO-214AB
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.24
其他特性：	EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY	最大击穿电压：	21.8 V
最小击穿电压：	17.8 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AB	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	3000 W	元件数量：	1
端子数量：	2	最高工作温度：	185 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性：	UNIDIRECTIONAL
最大功率耗散：	6 W	认证状态：	Not Qualified
最大重复峰值反向电压：	16 V	表面贴装：	YES
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

3KASMC16HE3/57T 数据手册

3KASMC10 thru 3KASMC43A

www.vishay.com

Vishay General Semiconductor

Surface Mount PAR^®Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction passivation optimized design

passivated anisotropic rectifier technology

• T_J= 185 °C capability suitable for high

reliability and automotive requirement

• Available in uni-directional polarity only

• 3000 W peak pulse power capability with a

10/1000 μs waveform

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AB (SMCJ)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

PRIMARY CHARACTERISTICS

V_WM

10 V to 43 V

V_BR

11.1 V to 52.8 V

3000 W

MECHANICAL DATA

P_PPM

Case: DO-214AB (SMCJ)

P_D

6.0 W

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

I_FSM

200 A

T_Jmax.

Polarity

Package

185 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 suffix meets JESD 201 class 2 whisker test

Uni-directional

DO-214AB (SMCJ)

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

3000

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾(fig. 3)

Peak power pulse current with a 10/1000 μs waveform ⁽¹⁾(fig. 1)

Peak forward surge current 8.3 ms single half sine-wave ⁽²⁾

Power dissipation on infinite heatsink, T_L= 75 °C (fig. 6)

Maximum instantaneous forward voltage at 100 A ⁽²⁾

Operating junction and storage temperature range

See next table

200

I_FSM

P_D

6.0

V_F

3.5

T_J, T_STG

-65 to +185

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2.

Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum

(2)

Revision: 25-Apr-14

Document Number: 88480

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

3KASMC16HE3/57T 替代型号

型号	品牌	替代类型	描述	数据表
3KASMC16HE3_A/I	VISHAY	完全替代	Trans Voltage Suppressor Diode, 3000W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-
3KASMC16HE3_A/H	VISHAY	类似代替	暂无描述

与3KASMC16HE3/57T相关器件

型号	品牌	获取价格	描述	数据表
3KASMC16HE3/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 3000W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-
3KASMC16-HE3/9AT	VISHAY	获取价格	3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
3KASMC16HE3_A/H	VISHAY	获取价格	暂无描述
3KASMC16HE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 3000W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-
3KASMC16HE3_B/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 3000W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-
3KASMC17	VISHAY	获取价格	Surface Mount Automotive Transient Voltage Suppressors
3KASMC17A	VISHAY	获取价格	Surface Mount Automotive Transient Voltage Suppressors
3KASMC17AE3/57T	VISHAY	获取价格	DIODE 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC,
3KASMC17A-E3/57T	VISHAY	获取价格	3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
3KASMC17AE3/9AT	VISHAY	获取价格	暂无描述

与3KASMC16HE3/57T相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

14
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

35

产品中心

服务支持

精选活动

关于我们

帮助中心

3KASMC16HE3/57T

3KASMC16HE3/57T 技术参数

3KASMC16HE3/57T 数据手册

3KASMC16HE3/57T 替代型号

与3KASMC16HE3/57T相关器件

与3KASMC16HE3/57T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

3KASMC16HE3/57T

3KASMC16HE3/57T 技术参数

3KASMC16HE3/57T 数据手册

3KASMC16HE3/57T 替代型号

与3KASMC16HE3/57T相关器件

与3KASMC16HE3/57T相关文章

您还可以找

您在本页遇到什么问题？