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3KASMC14-HE3/9AT

更新时间： 2024-11-15 03:52:35
品牌 Logo 应用领域
威世 - VISHAY 二极管瞬态抑制器
页数 文件大小 规格书
5页 88K
描述
Trans Voltage Suppressor Diode, 3000W, 14V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

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3KASMC14-HE3/9AT 数据手册

 浏览型号3KASMC14-HE3/9AT的Datasheet PDF文件第2页浏览型号3KASMC14-HE3/9AT的Datasheet PDF文件第3页浏览型号3KASMC14-HE3/9AT的Datasheet PDF文件第4页浏览型号3KASMC14-HE3/9AT的Datasheet PDF文件第5页 
3KASMC10 thru 3KASMC43A  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high  
reliability and automotive requirement  
• Available in uni-directional polarity only  
• 3000 W peak pulse power capability with a  
10/1000 μs waveform  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AB (SMC)  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
VWM  
PPPM  
PD  
10 V to 43 V  
3000 W  
6.0 W  
MECHANICAL DATA  
Case: DO-214AB (SMC)  
IFSM  
200 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3 - RoHS compliant and AEC-Q101 qualified  
TJ max.  
185 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
3000  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 3)  
Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1)  
Peak forward surge current 8.3 ms single half sine-wave (2)  
Power dissipation on infinite heatsink, TL = 75 °C (fig. 6)  
Maximum instantaneous forward voltage at 100 A (2)  
Operating junction and storage temperature range  
See next table  
200  
A
IFSM  
A
PD  
6.0  
W
VF  
3.5  
V
TJ, TSTG  
- 65 to + 185  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(2)  
Revision: 29-Jul-11  
Document Number: 88480  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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