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3EZ6.8 PDF预览

3EZ6.8

更新时间: 2024-02-21 01:09:01
品牌 Logo 应用领域
强茂 - PANJIT 稳压二极管测试
页数 文件大小 规格书
4页 693K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

3EZ6.8 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-41包装说明:PLASTIC, DO-41, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.56外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:2 Ω
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.25 W认证状态:Not Qualified
标称参考电压:6.8 V子类别:Voltage Reference Diodes
表面贴装:NO技术:ZENER
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:20%工作测试电流:110 mA
Base Number Matches:1

3EZ6.8 数据手册

 浏览型号3EZ6.8的Datasheet PDF文件第2页浏览型号3EZ6.8的Datasheet PDF文件第3页浏览型号3EZ6.8的Datasheet PDF文件第4页 
DATA SHEET  
3EZ6.8~3EZ100  
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES  
Unit: inch(mm)  
DO-15  
VOLTAGE  
POWER  
3.0 Watts  
6.8 to 100 Volts  
FEATURES  
• Low profile package  
.034(.86)  
.028(.71)  
• Built-in strain relief  
• Glass passivated iunction  
• Low inductance  
• Typical ID less than 1.0µA above 11V  
• Plastic package has Underwriters Laboratory Flammability  
Classification 94V-O  
• High temperature soldering : 260°C /10 seconds at terminals  
• Pb free product are available : 99% Sn above can meet RoHS  
environment substance directive request  
.140(3.6)  
.104(2.6)  
MECHANICALDATA  
Case: JEDEC DO-15, Molded plastic over passivated junction  
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026  
Polarity: Color band denotes positive end (cathode)  
Standard packing: 52mm tape  
Weight: 0.015 ounce, 0.04 gram  
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
Param eter  
Sym bol  
Value  
Units  
Pwak Pulse PowerD issipation on TA=50O C (Notes A)  
D erate above 70O C  
3.0  
24.0  
W
atts  
P
D
m W /O C  
Peak Forward Surge C urrent8.3m s single halfsine-wave  
superim posed on rated load (JED EC m ethod)  
15  
Am ps  
IFSM  
O perating Junction and Storage Tem perature Range  
-55 to + 150  
O C  
TJ,TSTG  
NOTES:  
A.Mounted on 5.0mm2 (.013mm thick) land areas.  
B.Measured on8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum  
PAGE . 1  
REV.0-JUN.9.2005  

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