Datasheet > 3EZ6.8_09

3EZ6.8_09

更新时间： 2024-02-16 20:07:53

品牌	Logo	应用领域
强茂 - PANJIT		稳压二极管
页数	文件大小	规格书
4页	107K
描述
SILICON ZENER DIODES

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数据手册

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3EZ6.8_09 数据手册

3EZ6.8~3EZ51

SILICON ZENER DIODES

Unit: inch(mm)

DO-15

VOLTAGE

FEATURES

POWER

6.8 to 51 Volts

3.0 Watts

• Low profile package

• Built-in strain relief

• Low inductance

.034(.86)

.028(.71)

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

• High temperature soldering : 260°C /10 seconds at terminals

• In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA

• Case: JEDECDO-15, Molded plastic

• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

.140(3.6)

.104(2.6)

• Polarity: Color band denotes positive end (cathode)

• Standard packing: 52mm tape

• Weight: 0.014 ounce, 0.0397 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

3.0

Units

Peak Pulse Power Dissipation on T_L=50 ^OC (Notes A)

Derate above 50 ^OC

W atts

Peak Forward Surge Current 8.3ms single half sine-wave

superimposed on rated load (JEDEC method)

Amps

^OC

FSM

Operating Junction and Storage Temperature Range

-55 to + 150

TJ,TSTG

NOTES:

A.Mounted on 5.0mm2 (.013mm thick) land areas.

B.Measured on8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum

PAGE . 1

STAD-FEB.10.2009

12 3 4

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