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3EZ6.8_09 PDF预览

3EZ6.8_09

更新时间: 2024-11-14 07:40:51
品牌 Logo 应用领域
强茂 - PANJIT 稳压二极管
页数 文件大小 规格书
4页 107K
描述
SILICON ZENER DIODES

3EZ6.8_09 数据手册

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3EZ6.8~3EZ51  
SILICON ZENER DIODES  
Unit: inch(mm)  
DO-15  
VOLTAGE  
FEATURES  
POWER  
6.8 to 51 Volts  
3.0 Watts  
• Low profile package  
• Built-in strain relief  
• Low inductance  
.034(.86)  
.028(.71)  
• Plastic package has Underwriters Laboratory Flammability  
Classification 94V-O  
• High temperature soldering : 260°C /10 seconds at terminals  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICAL DATA  
• Case: JEDECDO-15, Molded plastic  
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026  
.140(3.6)  
.104(2.6)  
• Polarity: Color band denotes positive end (cathode)  
• Standard packing: 52mm tape  
• Weight: 0.014 ounce, 0.0397 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
3.0  
Units  
Peak Pulse Power Dissipation on TL=50 OC (Notes A)  
Derate above 50 OC  
W atts  
P
D
Peak Forward Surge Current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC method)  
15  
Amps  
OC  
I
FSM  
Operating Junction and Storage Temperature Range  
-55 to + 150  
TJ,TSTG  
NOTES:  
A.Mounted on 5.0mm2 (.013mm thick) land areas.  
B.Measured on8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum  
PAGE . 1  
STAD-FEB.10.2009  
1

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