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34AA02-E/P PDF预览

34AA02-E/P

更新时间: 2024-10-30 19:25:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
36页 595K
描述
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8

34AA02-E/P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:26 weeks
风险等级:5.56最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDIP-T8
JESD-609代码:e3长度:9.27 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:256X8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT APPLICABLE
电源:2/5 V认证状态:Not Qualified
座面最大高度:5.334 mm串行总线类型:I2C
最大待机电流:0.000005 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):2.5 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT APPLICABLE
宽度:7.62 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

34AA02-E/P 数据手册

 浏览型号34AA02-E/P的Datasheet PDF文件第2页浏览型号34AA02-E/P的Datasheet PDF文件第3页浏览型号34AA02-E/P的Datasheet PDF文件第4页浏览型号34AA02-E/P的Datasheet PDF文件第5页浏览型号34AA02-E/P的Datasheet PDF文件第6页浏览型号34AA02-E/P的Datasheet PDF文件第7页 
34AA02/34LC02  
2K I2CSerial EEPROM Software Write-Protect  
Features:  
Package Types  
PDIP/SOIC/TSSOP/MSOP/TDFN  
• Permanent and Resettable Software Write-Protect  
for Lower Half of the Array (00h-7Fh)  
A0  
A1  
1
2
3
4
8
7
6
5
VCC  
WP  
1
VCC  
A0  
8
7
6
5
• Single Supply with Operation Down to 1.7V  
• Low-Power CMOS Technology:  
WP  
2
3
4
A1  
A2  
SCL  
SDA  
A2  
SCL  
SDA  
- Read current 1 mA, typical  
VSS  
- Standby current, 100 nA, typical  
VSS  
• 2-Wire Serial Interface Bus, I2C™ Compatible  
• Cascadable up to Eight Devices  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kHz and 400 kHz Compatibility  
• 1 MHz Clock for LC Versions  
SOT-23  
1
SCL  
VSS  
6
VCC  
A0  
2
3
5
4
A1  
SDA  
• Page Write Time 3 ms, typical  
• Self-Timed Erase/Write Cycle  
Description:  
• 16-Byte Page Write Buffer  
The Microchip Technology Inc. 34AA02/34LC02  
(34XX02*) is a 2 Kbit Electrically Erasable PROM  
capable of operation across a broad voltage range  
(1.7V to 5.5V). This device has two software write-  
protect features for the lower half of the array, as well  
as an external pin that can be used to write-protect the  
entire array. This allows the system designer to protect  
none, half, or all of the array, depending on the  
application. The device is organized as one block of  
256 x 8-bit memory with a 2-wire serial interface. Low-  
voltage design permits operation down to 1.7V, with  
standby and active currents of only 100 nA and 1 mA,  
respectively. The 34XX02 also has a page write  
capability for up to 16 bytes of data. The 34XX02 is  
available in the standard 8-pin PDIP, surface mount  
SOIC, TSSOP, MSOP and TDFN packages. The  
34XX02 is also available in the 6-lead, SOT-23  
package.  
• ESD Protection > 4,000V  
• Software Write Protection for Lower 128 Bytes  
• Hardware Write Protection for Entire Array  
• More than 1 Million Erase/Write Cycles  
• Data Retention > 200 Years  
• 8-Lead PDIP, SOIC, TSSOP, MSOP and TDFN  
Packages  
• 6-Lead SOT-23 Package  
• Pb-free and RoHS Compliant  
• Available for Extended Temperature Ranges:  
- Industrial (I): -40°C to +85°C  
- Automotive (E): -40°C to +125°C  
Device Selection Table  
Part  
VCC  
Max. Clock  
Frequency  
Temp  
Ranges  
Number  
Range  
34AA02  
34LC02  
1.7-5.5  
2.2-5.5  
400 kHz(1)  
1 MHz  
I,E  
I,E  
Note 1: 100 kHz for VCC <1.8V.  
*34XX02 is used in this document as a generic part number  
for the 34AA02/34LC02 devices.  
2011 Microchip Technology Inc.  
DS22029F-page 1  

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