RoHS
3370PT Series RoHS
SEMICONDUCTOR
Nell High Power Products
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNIT
TYP. MAX.
TJ = TJ maximum, tp ≤ 5 ms
Maximum peak gate power
PGM
25
5
W
A
PG(AV)
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
IGM
10
12
10
+VGM
-VGM
TJ = TJ maximum, tp ≤ 5 ms
V
TJ = -40°C
TJ = 25°C
200
100
50
500
250
150
4
IGT
DC gate current required to trigger
DC gate voltage required to trigger
mA
V
Maximum required gate
TJ = 125°C
TJ = -40°C
TJ = 25°C
TJ = 125°C
current/voltage are the lowest
value which will trigger all units
12V anode to cathode applied
2.5
1.8
1.1
VGT
3
2
Maximum gate current/
voltage not to trigger is the
TJ = TJ maximum maximum value which will
not trigger any unit with rated
DC gate current not to trigger
DC gate voltage not to trigger
lGD
10
mA
V
VGD
0.25
VDRM anode to cathode applied
THERMAL AND MECHANICAL SPECIFICATIONS
SYMBOL
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.020
UNIT
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
TJ
ºC
Tstg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ±10%
Rth(J-hs)
0.010
K/W
0.006
Rth(C-hs)
0.003
50000
(5100)
N
(kg)
g
Approximate weight
Case style
930
Nell’s DX-type Capsule
RthJC CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDUCTIONS
UNITS
CONDUCTION ANGEL
SINGLE SIDE DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
120°
90°
60°
30°
0.003
0.004
0.005
0.007
0.012
0.003
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
TJ = TJ maximum
K/W
0.012
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Page 3 of 7
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