Datasheet > 33285_07

33285_07

更新时间： 2024-11-13 02:58:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		驱动器
页数	文件大小	规格书
13页	313K
描述
Dual High-Side TMOS Driver

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33285_07 数据手册

Document Number: MC33285

Rev. 5.0, 2/2007

Freescale Semiconductor

Advance Information

Dual High-Side TMOS Driver

33285

A single input controls the 33285 in driving two external high-side N-

Channel TMOS power FETs controlling incandescent or inductive

loads. Pulse Width Modulated (PWM) input control to 1.0 kHz is

possible. The 33285 contains a common internal charge pump used to

enhance the Gate voltage of both FETs.

HIGH-SIDE TMOS DRIVER

An external charge capacitor provides access to the charge pump

output. Both external FETs are protected against inductive load

transients by separate internal source-to-gate dynamic clamps. The

power FETs are protected by the 33285 with short-circuit delay time of

800 µs. The device is designed to withstand reverse polarity battery

and load dump transients, encountered in automotive applications.

Features

D SUFFIX

EF SUFFIX (PB-FREE)

98ASB42564B

• PWM Capability

• Power TMOS Number One (OUT1) Short-Circuit Detection and

Short-Circuit Protection

8-PIN SOICN

• Voltage Range 7.0 V ≤ 40 V

• Extended Temperature Range from -40°C ≤ 125°C

• Load Dump Protected

• Overvoltage Detection and Activation of OUT2 During

Overvoltage

• Single Input Control for Both Output Stages

• Capacitor Value of 100 nF Connected to Pin CP

• Analog Input Control Measurement Detection

• OUT1 LOAD Leakage Measurement Detection

• Pb-Free Packaging Designated by Suffix Code EF

ORDERING INFORMATION

Temperature

Package

Device

Range (T )

MC33285D/R2

-40°C to 125°C

8 SOICN

MCZ33285EF/R2

PWR

33285

VCC

DRN

OUT2

Input Control

OUT1

SRC

Motor

GND

Figure 1. 33285 Simplified Application Diagram

* This document contains certain information on a new product.

Specifications and information herein are subject to change without notice.

12 3 4 5 6 7...13

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