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30PDA10 PDF预览

30PDA10

更新时间: 2024-10-27 22:08:03
品牌 Logo 应用领域
NIEC 二极管
页数 文件大小 规格书
5页 40K
描述
DIODE

30PDA10 数据手册

 浏览型号30PDA10的Datasheet PDF文件第2页浏览型号30PDA10的Datasheet PDF文件第3页浏览型号30PDA10的Datasheet PDF文件第4页浏览型号30PDA10的Datasheet PDF文件第5页 
DIODE Type : 30PDA10  
OUTLINE DRAWING  
3A 100V Tj =150 °C  
FEATURES  
* Low Forward Voltage drop  
* Low Reverse Leakage Current  
* High Surge Capability  
Maximum Ratings  
Approx Net Weight:1.24g  
Symbol  
VRRM  
30PDA10  
100  
Unit  
V
Rating  
Repetitive Peak Reverse Voltage  
50Hz  
Ta=31°C *1  
1.6  
Average Rectified Output Current  
IO  
Half Sine Wave  
Resistive Load  
A
Tl=124°C  
(Tl: Lead Temperature)  
3.0  
4.71  
100  
RMS Forward Current  
Surge Forward Current  
IF(RMS)  
A
A
50Hz Half Sine Wave,1cycle,  
Non-repetitive  
IFSM  
Operating JunctionTemperature Range  
Storage Temperature Range  
Tjw  
Tstg  
- 40 to + 150  
- 40 to + 150  
°C  
°C  
Electrical Thermal Characteristics  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Characteristics  
Peak Reverse Current  
Peak Forward Voltage  
IRM  
VFM  
-
-
-
-
-
-
-
-
10  
1.0  
80  
8
Tj= 25°C, VRM= VRRM  
Tj= 25°C, IFM= 3.0A  
µA  
V
Rth(j-a) Junction to Ambient *1  
Rth(j-l) Junction to Lead  
Thermal Resistance  
°C/W  
*1: Without Fin or P.C. Board mounted  

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