VS-30L30CTPbF, VS-30L30CT-N3
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Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
FEATURES
Base
common
cathode
2
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
Anode
Anode
2
Common
cathode
1
3
TO-220AB
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
• Designed and qualified according to JEDEC-JESD47
Package
TO-220AB
2 x 15 A
30 V
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
IF(AV)
VR
DESCRIPTION
VF at IF
0.37 V
I
RM max.
350 mA at 125 °C
150 °C
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
TJ max.
Diode variation
EAS
Common cathode
15 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
VF
CHARACTERISTICS
VALUES
30
UNITS
Rectangular waveform
A
30
V
15 Apk, TJ = 125 °C (per leg)
0.37
TJ
Range
- 55 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-30L30CTPBF
VS-30L30CT-N3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
30
30
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
per device
per leg
30
15
Maximum average
forward current
IF(AV)
50 % duty cycle at TC = 140 °C, rectangular waveform
A
5 µs sine or 3 µs rect. pulse
1450
Following any rated load
condition and with rated
Maximum peak one cycle
non-repetitive surge current
IFSM
VRRM applied
10 ms sine or 6 ms rect. pulse
220
15
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 2 A, L = 7.5 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
Revision: 26-Aug-11
Document Number: 94195
1
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