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30KPAB45AB PDF预览

30KPAB45AB

更新时间: 2024-10-28 19:36:15
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
5页 120K
描述
Trans Voltage Suppressor Diode, 30000W, 45V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, P600, 2 PIN

30KPAB45AB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
其他特性:EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED最小击穿电压:50.3 V
外壳连接:ISOLATED最大钳位电压:77.4 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:30000 W
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:8 W
最大重复峰值反向电压:45 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

30KPAB45AB 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 30000W  
RoHS  
30KPA Series  
Description  
The 30KPA Series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
Δ VBR = 0.1% × VBR@25°C  
tꢀ 5ZQJDBMꢀ*R less than 2μA  
above 73V  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
KVODUJPOꢀJOꢀ1ꢁꢂꢂꢀQBDLBHF  
tꢀ ꢃꢂꢂꢂꢂ8ꢀQFBLꢀQVMTFꢀ  
capability at 10×1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
tꢀ )JHIꢀUFNQFSBUVSFꢀ  
soldering guaranteed:  
265°C./10  
TFDPOETꢅꢂꢆꢃꢇꢈ ꢉꢊꢋꢆꢈNNꢌꢀ  
lead length, 5 lbs., (2.3kg)  
tension  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability classification  
94V-O  
tꢀ .BUUF5JOꢀ-FBEoGSFFꢀ  
plated  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0 Volts to BV min  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
Unit  
W
Peak Pulse Power Dissipation by  
10x1000μs test waveform (Fig.1)  
(Note 1)  
Applications  
30000  
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
V
Steady State Power Dissipation on  
inifinite heat sink atTL=75ºC (Fig. 5)  
PD  
8.0  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
only (Note 2)  
IFSM  
400  
Operating Junction and Storage  
Temperature Range  
T , TSTG -55 to 175  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
8.0  
40  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
www.littelfuse.com  
©2007 Littelfuse  
99  
30KPA Series  
Specifications are subject to change without notice.  

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