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30KPA90CB PDF预览

30KPA90CB

更新时间: 2024-10-28 13:04:31
品牌 Logo 应用领域
力特 - LITTELFUSE 瞬态抑制器二极管局域网
页数 文件大小 规格书
5页 134K
描述
Trans Voltage Suppressor Diode, 30000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

30KPA90CB 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.69
Is Samacsys:N其他特性:UL RECOGNIZED
最小击穿电压:100.5 V外壳连接:ISOLATED
最大钳位电压:146.4 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:30000 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):250极性:BIDIRECTIONAL
最大功率耗散:8 W认证状态:Not Qualified
最大重复峰值反向电压:90 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

30KPA90CB 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 30000W > 30KPA series  
RoHS  
30KPA Series  
Description  
The 30KPA Series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 5ZQJDBMꢀ*R less than 2μA  
above 73V  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT tꢀ )JHIꢀUFNQFSBUVSFꢀ  
soldering guaranteed:  
260°C/40 seconds /  
0.375,(9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability classification  
94V-O  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
junction in P600 package  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
tꢀ ꢂꢃꢃꢃꢃ8ꢀQFBLꢀQVMTFꢀ  
capability at 10×1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0 Volts to BV min  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
tꢀ .BUUF5JOꢀ-FBEoGSFFꢀQMBUFE  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
Parameter  
Symbol  
PPPM  
Value  
Unit  
W
Peak Pulse Power Dissipation by  
10x1000μs test waveform (Fig.1)  
(Note 1)  
Applications  
30000  
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
Steady State Power Dissipation on  
inifinite heat sink atTL=75ºC (Fig. 5)  
PD  
8.0  
W
A
V
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
only (Note 2)  
IFSM  
400  
Operating Junction and Storage  
Temperature Range  
T , TSTG -55 to 175  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
8.0  
40  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
©2009 Littelfuse, Inc.  
123  
Revision: January 09, 2009  
30KPA Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/30KPA.html for current information.  

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