Datasheet > 30KP85AE3TR

30KP85AE3TR

更新时间： 2024-11-01 14:28:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	156K
描述
Trans Voltage Suppressor Diode, 30000W, 85V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

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30KP85AE3TR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	PLASTIC PACKAGE-2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.34
Is Samacsys：	N	最大击穿电压：	104 V
最小击穿电压：	94.4 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	30000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.61 W	认证状态：	Not Qualified
最大重复峰值反向电压：	85 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

30KP85AE3TR 数据手册

30KP33 thru 30KP400CA, e3

30kW Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These Microsemi 30 kW Transient Voltage Suppressors (TVSs) are

designed for applications requiring protection of voltage-sensitive electronic

devices that may be damaged by harsh or severe voltage transients

including lightning per IEC61000-4-5 and class levels with various source

impedances described herein. This series is available in 33 to 400 volt

standoff voltages (V_WM) in both unidirectional and bi-directional with either

5% or 10% tolerances of the Breakdown Voltage (V_BR). Microsemi also

offers numerous other TVS products to meet higher or lower power

demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Available in both Unidirectional and Bidirectional

construction (Bidirectional with C or CA suffix)

•

Protection from switching transients and induced RF

Protection from ESD, and EFT per IEC 61000-4-2 and

IEC 61000-4-4

•

Selections for 33 to 400 volt standoff voltages V_WM

Suppresses transients up to 30 kW @ 10/1000 µs and

200 kW @ 8/20 µs (see Figure 1)

•

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1,2,3,4: 30KP33A - 30KP400A or CA

•

Fast response

Class 5: 30KP33A - 30KP400A or CA (short distance)

Class 5: 30KP33A - 30KP220A or CA (long distance)

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for

added 100% temperature cycle -55^oC to +125^oC

(10X) as well as surge (3X) and 24 hours HTRB with

post test V_Z& I_R(in the operating direction for

unidirectional or both directions for bidirectional)

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1,2, 3: 30KP33A to 30KP400A or CA

Class 4: 30KP33A to 30KP220A or CA

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers.

Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

Class 2: 30KP33A to 30KP400A or CA

Class 3: 30KP33 to 30KP220A or CA

Class 4: 30KP33 to 30KP110A or CA

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 30,000 watts

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

at 10/1000 μs (also see Figures 1 and 2)

•

Impulse repetition rate (duty factor): 0.05%

FINISH: Tin-Lead or RoHS compliant annealed

matte-Tin plating readily solderable per MIL-STD-

750, method 2026

_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

Operating & Storage temperature: -65^ºC to +150^ºC

Thermal resistance: 17.5^ºC/W junction to lead, or

77.5^ºC/W junction to ambient when mounted on FR4

PC board with 4 mm²copper pads (1oz) and track

width 1 mm, length 25 mm

•

MARKING: Body marked with part number

•

POLARITY: Band denotes cathode. Bidirectional not

marked for polarity

•

WEIGHT: 1.7 grams (approximate)

TAPE & REEL option: Standard per EIA-296 for axial

package (add “TR” suffix to part number)

•

Steady-State Power dissipation: 7 watts at T_L=

27.5^oC, or 1.61 watts at T_A= 25^ºC when mounted on

FR4 PC board described for thermal resistance

•

See package dimension on last page

•

Forward Surge: 250 Amps 8.3 ms half-sine wave for

unidirectional devices only

Solder temperatures: 260 ^ºC for 10 s (maximum)

8-21-2007 REV K

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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与30KP85AE3TR相关器件

型号	品牌	获取价格	描述	数据表
30KP85ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 85V V(RWM), Unidirectional, 1 Element, Silicon, PL
30KP85C	NJSEMI	获取价格	TRANSIENT VOLTAGE SUPPRESSOR
30KP85CA	NJSEMI	获取价格	Diode TVS Single Bi-Dir 85V 30KW 2-Pin Case 5A
30KP85CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 85V V(RWM), Bidirectional, 1 Element, Silicon, PLA
30KP85CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 85V V(RWM), Bidirectional, 1 Element, Silicon, PLA
30KP85CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 85V V(RWM), Bidirectional,
30KP85E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 85V V(RWM), Unidirectional, 1 Element, Silicon, PL
30KP85HR	DIGITRON	获取价格	Trans Voltage Suppressor Diode
30KP85S	LGE	获取价格	Glass passivated junction chip
30KP85SA	LGE	获取价格	Glass passivated junction chip

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