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30CTQ035 PDF预览

30CTQ035

更新时间: 2024-11-29 12:26:15
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管IOT局域网
页数 文件大小 规格书
2页 138K
描述
High Temperature Schottky Rectifier . Common Cathode

30CTQ035 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.63
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.62 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:290 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-50 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:35 V最大反向电流:50 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

30CTQ035 数据手册

 浏览型号30CTQ035的Datasheet PDF文件第2页 
30CTQ035 ... 30CTQ045  
30CTQ035 ... 30CTQ045  
High Temperature Schottky Rectifier – Common Cathode  
Hochtemperatur Schottky Gleichrichterdiode – Gemeinsame Kathode  
Version 2013-05-07  
Nominal current  
Nennstrom  
2 x 15 A  
35...45 V  
TO-220AB  
1.8 g  
10.1±0.3  
1.2±0.2  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
Ø 3.8±0.2  
4
4
2
4.5±0.2  
Plastic case  
Kunststoffgehäuse  
Type  
Typ  
1 2 3  
Weight approx.  
Gewicht ca.  
2.67±0.2  
0.42±0.1  
1.3±0.1  
0.8±0.2  
1
3
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
2.54±0.1  
Standard packaging in tubes  
Standard Lieferform in Stangen  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V] 1)  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V] 1)  
Forward voltage  
Durchlass-Spannung  
VF [V] 1), Tj = 25°C  
IF = 5 A  
< 0.52  
< 0.52  
< 0.52  
IF = 15 A  
< 0.62  
< 0.62  
< 0.62  
30CTQ035  
30CTQ040  
30CTQ045  
35  
40  
45  
35  
40  
45  
Max. average forward current,  
Dauergrenzstrom  
TC = 127°C  
TC = 127°C  
IFAV  
IFAV  
15 A 2)  
30 A 3)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFRM  
IFSM  
i2t  
53 A 4)  
Peak forward surge current, 50 Hz half sine-wave  
Stoßstrom für eine 50 Hz Sinus-Halbwelle  
265 A 1)  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
351 A2s 1)  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
-50...+175°C  
-50...+175°C  
Tj  
TS  
1
Per diode – Pro Diode  
2
3
4
50% Duty Cycle, Rectangular waveform - 50% Duty Cycle, Rechteckwellenform  
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)  
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 
 

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