Datasheet > 308E

308E

更新时间： 2024-10-28 02:58:15

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
8页	262K
描述
GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz

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308E 数据手册

HMC308 / 308E

v05.1107

GENERAL PURPOSE 100 mW GaAs

MMIC AMPLIFIER, 0.8 - 3.8 GHz

Typical Applications

Features

Broadband or Narrow Band Applications:

Gain: 18 dB

• Cellular/PCS/3G

P1dB Output Power: +17 dBm@ +5V

Single Supply: +3V or +5V

No External Components

Integrated DC Blocks

Ultra Small Package: SOT26

• Fixed Wireless & Telematics

• Cable Modem Termination Systems

• WLAN, Bluetooth & RFID

Functional Diagram

General Description

The HMC308 & HMC308E are low cost MESFET

MMIC ampliﬁers that operate from a single +3 to

+5V supply from 0.8 to 3.8 GHz. The surface mount

SOT26 ampliﬁer can be used as a broadband ampli-

ﬁer stage or used with external matching for opti-

mized narrow band applications. With Vdd biased at

+5V, the HMC308 & HMC308E offers 18 dB of gain

and +20 dBm of saturated output power while requir-

ing only 53 mA of current. This ampliﬁer is ideal as

a driver ampliﬁer for transmitters or for use as a

local oscillator (LO) ampliﬁer to increase drive levels

for passive mixers. The ampliﬁer occupies 0.014 in²

(9 mm²), making it ideal for compact radio designs.

Electrical Speciﬁcations, T_A= +25° C, as a function of Vdd

Vdd = +3V

Vdd = +5V

Typ. Max.

Parameter

Units

Min.

Typ.

Max. Min.

Typ.

Max.

Min.

Typ.

Max. Min.

Frequency Range

2.3 - 2.7

15.5

0.8 - 2.3

2.3 - 2.7

2.7 - 3.8

GHz

Gain

Gain Variation over Temperature

Input Return Loss

Output Return Loss

0.025 0.035

dB/°C

Output Power for 1 dB

Compression (P1dB)

13.5

16.5

dBm

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

7.5

19.5

dBm

Supply Current (Idd)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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