Datasheet > 30-PT07NIA320RV-LE06F68Y

30-PT07NIA320RV-LE06F68Y

更新时间： 2024-04-09 18:58:42

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
31页	1477K
描述
IGBT fast High efficiency in hard switching and resonant topologies High speed switching Low gate charge

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30-PT07NIA320RV-LE06F68Y /

30-FT07NIA320RV-LE06F68

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_jꢀꢀ[°C]

V_Fꢀ[V] I_F[A]

Min

Max

Buck Switch

Static

V_GE(th)

Gate-emitter threshold voltage

0,2284 25

1,65

1,69

1,75

1,9

V_CEsat

Collector-emitter saturation voltage

320

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

650

µA

800

none

19240

736

C_ies

C_oes

C_res

Q_g

Output capacitance

f_ꢀ= 1 Mhz

Reverse transfer capacitance

Gate charge

316

400

320

684

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j‐s)

Thermal resistance junction to sink

0,33

K/W

Dynamic

115

107

109

t_d(on)

125

150

Turn-on delay time

t_r

Rise time

125

150

125

150

125

150

125

150

113

122

125

1,099

2,351

2,418

4,483

R_gon= 2 Ω

R_goff= 2 Ω

t_d(off)

Turn-off delay time

Fall time

±15

350

320

t_f

Q_r

FWD

Q_r

FWD

Q_r

FWD

= 10,5 μC

= 16,5 μC

= 19 μC

E_on

Turn-on energy (per pulse)

mWs

E_off

Turn-off energy (per pulse)

125

150

5,425

5,902

22 Jan. 2019 / Revision 1

1 2 345 6 7...31

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