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30-FT10NAA200S701-PE59F08 PDF预览

30-FT10NAA200S701-PE59F08

更新时间: 2023-09-03 20:25:14
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VINCOTECH /
页数 文件大小 规格书
33页 8912K
描述
Low collector emitter saturation voltage;High speed and smooth switching

30-FT10NAA200S701-PE59F08 数据手册

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30-FT10NAA200S701-PE59F08  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Neutral Point Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00334 25  
25  
4,35  
5,1  
5,85  
V
V
1,83  
2,06  
2,11  
2,35(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
200  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
950  
0
25  
4
µA  
nA  
Ω
20  
25  
200  
0,75  
13000  
278  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 100 kHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
40  
±15  
0
460  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
0,32  
K/W  
Dynamic  
25  
85,83  
88,21  
89,19  
13,34  
15,07  
15,31  
101,78  
131,72  
139,97  
19,65  
41,02  
50,59  
7,2  
td(on)  
Turn-on delay time  
125  
150  
25  
ns  
ns  
tr  
Rise time  
125  
150  
25  
Rgon = 2 Ω  
Rgoff = 2 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
750  
170  
tf  
125  
150  
25  
ns  
QrFWD=4,95 µC  
QrFWD=11,2 µC  
QrFWD=13,4 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
9,86  
mWs  
mWs  
10,58  
5,22  
Eoff  
125  
150  
9,58  
10,81  
Copyright Vincotech  
6
23 Aug. 2022 / Revision 1  

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