Datasheet > 30-FT07NIB300S506-LE06F53

30-FT07NIB300S506-LE06F53

更新时间： 2024-04-09 18:59:13

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
32页	9366K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

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30-FT07NIB300S506-LE06F53

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Buck Diode

Static

1,73

1,45

1,41

2,5⁽¹⁾

V_F

I_R

Forward voltage

280

125

150

Reverse leakage current

Thermal

V_r= 650 V

µA

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink⁽²⁾

Dynamic

0,37

K/W

R_th(j-s)

107,7

184,24

207,95

46,1

I_RM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

85,83

96,15

2,84

di/dt=5273 A/µs

di/dt=5214 A/µs

di/dt=5555 A/µs

Q_r

Recovered charge

-5/15

350

180

125

150

9,34

μC

11,79

0,511

1,75

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

2,24

6136,92

4694,12

4629,6

(di_rf/dt)_max

125

150

02 Feb. 2024 / Revision 1

1...3 4 567 8 9...32

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