Datasheet > 30-FT07NIB300S506-LE06F53

30-FT07NIB300S506-LE06F53

更新时间： 2024-04-09 18:59:13

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
32页	9366K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

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30-FT07NIB300S506-LE06F53 数据手册

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30-FT07NIB300S506-LE06F53

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Boost Switch

V_CES

Collector-emitter voltage

650

260

900

389

±20

175

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

Boost Diode

V_RRM

Peak repetitive reverse voltage

1300

182

461

175

I_F

Forward current (DC current)

Total power dissipation

T_j= T_jmax

T_s= 80 °C

P_tot

°C

T_jmax

Maximum junction temperature

Boost Sw. Protection Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1200

I_F

I_FSM

I²t

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

175

02 Feb. 2024 / Revision 1

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