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30-FT07NIB300S506-LE06F53 PDF预览

30-FT07NIB300S506-LE06F53

更新时间: 2024-04-09 18:59:13
品牌 Logo 应用领域
VINCOTECH 双极性晶体管
页数 文件大小 规格书
32页 9366K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

30-FT07NIB300S506-LE06F53 数据手册

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30-FT07NIB300S506-LE06F53  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,003  
300  
25  
3,2  
4
4,8  
V
V
25  
1,43  
1,52  
1,55  
1,75(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
200  
400  
µA  
nA  
Ω
20  
None  
18000  
520  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
68  
VCC = 520 V  
15  
300  
656  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(2)  
Dynamic  
0,24  
K/W  
Rth(j-s)  
25  
132,68  
130,32  
129,01  
31,07  
34,38  
35,62  
358,41  
387,14  
395,79  
22,59  
26,8  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 8 Ω  
Rgoff = 8 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
-5/15  
350  
180  
tf  
125  
150  
25  
ns  
29,27  
2,52  
QrFWD=2,84 µC  
QrFWD=9,34 µC  
QrFWD=11,79 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
3,69  
mWs  
mWs  
4,05  
2,82  
Eoff  
125  
150  
3,98  
4,21  
Copyright Vincotech  
5
02 Feb. 2024 / Revision 1  

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