Datasheet > 30-FT07NIB200S502-LE04F58

30-FT07NIB200S502-LE04F58

更新时间： 2023-09-03 20:40:29

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	8727K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

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30-FT07NIB200S502-LE04F58

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Buck Switch

V_CES

Collector-emitter voltage

650

164

600

236

±20

175

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

Buck Diode

V_RRM

Peak repetitive reverse voltage

650

148

400

186

175

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

°C

T_jmax

Maximum junction temperature

Buck Sw. Protection Diode

V_RRM

Peak repetitive reverse voltage

650

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

°C

T_jmax

Maximum junction temperature

175

09 Feb. 2023 / Revision 2

123 4 5 6 7...32

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