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30-FT07NIB200SG02-L965F08 PDF预览

30-FT07NIB200SG02-L965F08

更新时间: 2023-09-03 20:32:31
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
31页 2618K
描述
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage

30-FT07NIB200SG02-L965F08 数据手册

 浏览型号30-FT07NIB200SG02-L965F08的Datasheet PDF文件第2页浏览型号30-FT07NIB200SG02-L965F08的Datasheet PDF文件第3页浏览型号30-FT07NIB200SG02-L965F08的Datasheet PDF文件第4页浏览型号30-FT07NIB200SG02-L965F08的Datasheet PDF文件第5页浏览型号30-FT07NIB200SG02-L965F08的Datasheet PDF文件第6页浏览型号30-FT07NIB200SG02-L965F08的Datasheet PDF文件第7页 
30-FT07NIB200SG02-L965F08  
30-PT07NIB200SG02-L965F08Y  
datasheet  
1200 V / 200 A  
flow NPC 2  
Features  
flow 2 12 mm housing  
● Three-level topology  
● High efficiency  
● Low inductive package  
Schematic  
Target applications  
● Solar Inverters  
Types  
● 30-FT07NIB200SG02-L965F08  
● 30-PT07NIB200SG02-L965F08Y  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Buck Switch  
VCES  
IC  
Collector-emitter voltage  
650  
162  
600  
318  
±20  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
Ptot  
VGES  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
W
V
tSC  
Tj ≤ 150 °C  
VGE = 15 V  
5
µs  
V
Short circuit ratings  
VCC  
400  
Tjmax  
Maximum junction temperature  
175  
°C  
Copyright Vincotech  
1
04 Apr. 2017 / Revision 1  

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