生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 450 V | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.38 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK828 | RENESAS |
获取价格 |
12A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET | |
2SK829 | NEC |
获取价格 |
FAST SWITCHING N CHANNEL SILICON POWER MOSFET | |
2SK83 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 23V V(BR)DSS | 6MA I(DSS) | TO-92 | |
2SK830 | RENESAS |
获取价格 |
15A, 500V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 | |
2SK831 | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
2SK833 | NEC |
获取价格 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET | |
2SK843 | ISC |
获取价格 |
Drain Current âID=10A@ TC=25C | |
2SK844 | ISC |
获取价格 |
Drain Current âID=8A@ TC=25C | |
2SK845 | ISC |
获取价格 |
Drain Current âID=5A@ TC=25C | |
2SK846 | ISC |
获取价格 |
Drain Current âID=3A@ TC=25C |