Datasheet > 2SK846

2SK846

更新时间： 2022-02-26 12:42:41

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	67K
描述
Drain Current âID=3A@ TC=25C

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2SK846 数据手册

INCHANGE Semiconductor

isc Product Specification

isc N-Channel MOSFET Transistor

2SK845

DESCRIPTION

·Drain Current –I_D=5A@ T_C=25℃

·Drain Source Voltage-

: V_DSS= 450V(Min)

APPLICATIONS

·high voltage, high speed power switching

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

VALUE

450

UNIT

ARAMETER

Drain-Source Voltage (V_GS=0)

Gate-Source Voltage

±20

Drain Current-continuous@ TC=25℃

Total Dissipation@TC=25℃

Max. Operating Junction Temperature

Storage Temperature Range

P_tot

T_j

150

℃

T_stg

-55~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.0

UNIT

℃/W

R_{th j-c}

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-a}

62.5

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