Datasheet > 2SK4047-01S

2SK4047-01S

更新时间： 2024-11-09 21:16:19

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	530K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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2SK4047-01S 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

2SK4047-01S 数据手册

http://www.fujielectric.co.jp/products/semiconductor/index.html

2SK4047-01S

FUJI POWER MOSFET

Automotive

Trench Power MOSFET (2^ndGen.) series

N-Channel enhancement mode power MOSFET

■Features

■Outline Drawings [mm]

■Equivalent circuit schematic

Low on-state resistance

Low switching loss

100% avalanche tested

Drain (D)

Gate (G)

■Applications

Source (S)

Automotive switching applications

■Absolute Maximum Ratings at Tc=25℃(unless otherwise specified)

Description

Symbol

V_DS

V_DSX

I_D

Characteristics

Unit

Remarks

V_GS=-20V

Drain-Source Voltage

Continuous Drain Current

±80

Pulsed Drain Current

I_DP

±320

+30/-20

Gate-Source Voltage

V_GS

I_AS

Non-Repetitive Maximum Avalanche current

Non-Repetitive Maximum Avalanche Energy

Maximum Power Dissipation

Note*1

Note*2

E_AS

P_D

274.5

195

℃

T_ch

150

Operating and Storage Temperature range

T_stg

-55 to +150

Note*1 : Tch≦150℃,See Fig.1 and Fig.2

Note*2 : Starting Tch=25℃,L=28.6μH,V_CC=48V,RG=50Ω,See Fig.1 and Fig.2

E_ASlimited by maximum channel temperature and avalanche current.

See to Avalanche Energy graph of page 4

■Electrical Characteristics at Tc=25℃(unless otherwise specified)

Static Ratings

Description

Symbol

BV_DSS

Conditions

Min.

Typ.

Max.

Unit

I_D=1mA

V_GS=0V

2.5

－

Drain-Source Breakdown Voltage

I_D=1mA

BV_DSX

V_GS(th)

I_DSS

－

3.0

－

V_GS=-20V

I_D=10mA

V_DS= V_GS

Gate Threshold Voltage

3.5

100

6.5

V_DS= 60V

V_GS=0V

Zero Gate Voltage Drain current

Gate-Source Leakage current

Drain-Source On-State Resistance

Ta=25℃

μA

mΩ

V_GS=+30V/-20V

V_DS= 0V

I_GSS

－

5.0

I_D=40A

R_DS(on)

－

V_GS=10V

Jul. 2013

12 3 4 5 6 7 8

中文翻译

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与2SK4047-01S相关器件

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2SK404E	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 20V V(BR)DSS \| 2.5MA I(DSS) \| SPAK
2SK404F	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 20V V(BR)DSS \| 5MA I(DSS) \| SPAK
2SK405	ETC	获取价格	2SK405
2SK4057	NEC	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
2SK4057(1)-S27-AY	RENESAS	获取价格	30mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA, LEAD FREE, TO-251, MP-3-B, 3 PIN
2SK4057-ZK-E1-AY	NEC	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
2SK4057-ZK-E2-AY	NEC	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 25V, 1-Element, N-Channel, Silicon, Meta
2SK4058(1)-S27-AY	RENESAS	获取价格	48000mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA, LEAD FREE, MP-3-B, 3 PIN
2SK4058-S15-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,25V V(BR)DSS,48A I(D),TO-251AA