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2SK3571 PDF预览

2SK3571

更新时间: 2024-01-10 04:53:22
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 84K
描述
SWITCHING N-CHANNEL POWER MOSFET

2SK3571 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-263包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.31外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):48 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263
JESD-30 代码:R-PSSO-G2JESD-609代码:e6
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):192 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3571 数据手册

 浏览型号2SK3571的Datasheet PDF文件第1页浏览型号2SK3571的Datasheet PDF文件第3页浏览型号2SK3571的Datasheet PDF文件第4页浏览型号2SK3571的Datasheet PDF文件第5页浏览型号2SK3571的Datasheet PDF文件第6页浏览型号2SK3571的Datasheet PDF文件第7页 
2SK3571  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
Characteristics  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
Symbol  
Test Conditions  
VDS = 20 V, VGS = 0 V  
VGS = ±20 V, VDS = 0 V  
MIN.  
TYP.  
MAX.  
Unit  
µA  
IDSS  
10  
±10  
2.5  
IGSS  
µA  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 24 A  
1.5  
11  
V
S
Forward Transfer Admittance  
Drain to Source On-state Resistance  
RDS(on)1 VGS = 10 V, ID = 24 A  
RDS(on)2 VGS = 4.5 V, ID = 18 A  
7.0  
10  
9.0  
16  
mΩ  
mΩ  
pF  
Input Capacitance  
Ciss  
VDS = 10 V  
1100  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
td(on)  
tr  
VGS = 0 V  
450  
160  
13  
5
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
f = 1 MHz  
VDD = 10 V, ID = 24 A  
VGS = 10 V  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
40  
9
RG = 10 Ω  
Total Gate Charge  
QG  
VDD = 16 V  
21  
4.2  
5
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
ID = 48 A  
IF = 48 A, VGS = 0 V  
IF = 48 A, VGS = 0 V  
di/dt = 100 A/µs  
1.0  
41  
27  
ns  
nC  
Qrr  
TEST CIRCUIT 1 SWITCHING TIME  
TEST CIRCUIT 2 GATE CHARGE  
D.U.T.  
D.U.T.  
I
G
= 2 mA  
RL  
V
GS  
R
L
90%  
V
GS  
Wave Form  
VGS  
10%  
RG  
0
PG.  
VDD  
50 Ω  
PG.  
VDD  
VDS  
90%  
90%  
V
0
GS  
V
DS  
10% 10%  
V
DS  
Wave Form  
0
τ
t
d(on)  
t
r
t
d(off)  
tf  
τ = 1µs  
t
on  
toff  
Duty Cycle 1%  
2
Data Sheet D16257EJ2V0DS  

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