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2SK3498(TE16L1) PDF预览

2SK3498(TE16L1)

更新时间: 2024-09-24 14:50:51
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东芝 - TOSHIBA /
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2SK3498(TE16L1) 数据手册

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2SK3498  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)  
2SK3498  
DC-DC Converter, Relay Drive and Motor Drive  
Applications  
Unit: mm  
Low drain-source ON-resistance: R  
= 4.2 (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 0.6 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 400 V)  
DSS  
DS  
Enhancement mode: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
400  
400  
±30  
1
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
3
DP  
Drain power dissipation (Tc = 25°C)  
P
20  
W
D
AS  
AR  
JEDEC  
JEITA  
Single-pulse avalanche energy  
E
113  
mJ  
(Note 2)  
Avalanche current  
I
1
2
A
TOSHIBA  
2-7J1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.36 g (typ.)  
T
150  
ch  
Storage temperature range  
T
stg  
55 to150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
6.25  
125  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 183 mH, R = 25 Ω,  
V
DD  
ch  
G
I
= 1 A  
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2010-04-13  

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