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2SK2940(S)-(2) PDF预览

2SK2940(S)-(2)

更新时间: 2024-10-14 14:46:23
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
12页 60K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

2SK2940(S)-(2) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.76
配置:Single最大漏极电流 (Abs) (ID):45 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):75 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

2SK2940(S)-(2) 数据手册

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2SK2940(L),2SK2940(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-563B (Z)  
3rd. Edition  
Jul. 1998  
Features  
Low on-resistance  
RDS =0.010 typ.  
High speed switching  
4V gate drive device can be driven from 5V source  
Outline  
LDPAK  
4
4
D
1
2
G
3
1
2
3
1. Gate  
2. Drain  
3. Source  
4. Drain  
S

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