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2SK2939(S)TR PDF预览

2SK2939(S)TR

更新时间: 2024-11-24 13:04:27
品牌 Logo 应用领域
日立 - HITACHI 开关电源开关
页数 文件大小 规格书
10页 58K
描述
Power Field-Effect Transistor, 35A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2SK2939(S)TR 数据手册

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2SK2939(L),2SK2939(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-562D (Z)  
5th. Edition  
Jun 1998  
Features  
Low on-resistance  
RDS =0.020 typ.  
High speed switching  
4V gate drive device can be driven from 5V source  
Outline  
LDPAK  
4
4
D
1
2
G
3
1
2
3
1. Gate  
2. Drain  
3. Source  
4. Drain  
S

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