Datasheet > 2SK2552C-EF

2SK2552C-EF

更新时间： 2024-01-09 23:05:02

品牌	Logo	应用领域
日电电子 - NEC		开关光电二极管晶体管
页数	文件大小	规格书
5页	128K
描述
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, USM, SC-75, 3 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SK2552C-EF 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SC-75	包装说明：	USM, SC-75, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.31	配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大漏极电流 (ID)：	0.01 A	FET 技术：	JUNCTION
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.1 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

2SK2552C-EF 数据手册

DATA SHEET

JUNCTION FIELD EFFECT TRANSISTOR

2SK2552C

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SK2552C contains a diode and high resistivity

between its gates and sources, for achieving short stability

time during power-on. In addition, because of its compact

package and low noise, the 2SK2552C is especially suitable

for compact ECMs for audio or mobile devices such as cell-

phones.

+0.1

0.3

0.15

–0.05

–0

0 to 0.1

+0.1

–0

0.2

0.6

TYP.

0.5

FEATURES

TYP. TYP.

• Low noise:

1.0 TYP.

1.6 ±0.1

0.75 ±0.05

−108.5 dB TYP. (V^DD= 2.0 V, C = 5 pF, RL = 2.2 kΩ)

• Containing a diode and high resistivity, short stability time is

achieved during power-on.

• Small package: SC-75 (USM)

ORDERING INFORMATION

PART NUMBER

2SK2552C

PACKAGE

SC-75 (USM)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (VGS = −1.0 V)

Gate to Drain Voltage

Drain Current

VDSX

V^GDO

I^D

−20

°C

Gate Current

I^G

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

100

T^j

125

1: Source

2: Drain

3: Gate

T^stg

−55 to +125

°C

Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18893EJ1V0DS00 (1st edition)

Date Published August 2007 NS

Printed in Japan

2007

12 3 4 5

中文翻译

下载PDF

与2SK2552C-EF相关器件

型号	品牌	获取价格	描述	数据表
2SK2552CEF-T1-A	RENESAS	获取价格	TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,150UA I(DSS),SC-75
2SK2552CEF-T1-AT	RENESAS	获取价格	TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,150UA I(DSS),SC-75
2SK2552C-EH	NEC	获取价格	暂无描述
2SK2552CEH-T1-A	RENESAS	获取价格	TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,210UA I(DSS),SC-75
2SK2552CEH-T1-AT	RENESAS	获取价格	TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,210UA I(DSS),SC-75
2SK2552C-EJ	NEC	获取价格	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2552J2	NEC	获取价格	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2552J2-T1	NEC	获取价格	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2552J3-T1	NEC	获取价格	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction
2SK2552J4	NEC	获取价格	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction

与2SK2552C-EF相关文章

LTM4644/LTM4644-1：创新的四输出同步降压微模块调节器
2024-07-02

3
2N3500：一款多用途NPN硅晶体管的全面解析
2024-07-02

6
最详细资料解析：BA5917AFP参数说明、引脚说明
2024-07-02

10
MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

4

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2552C-EF

2SK2552C-EF 技术参数

2SK2552C-EF 数据手册

与2SK2552C-EF相关器件

与2SK2552C-EF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2552C-EF

2SK2552C-EF 技术参数

2SK2552C-EF 数据手册

与2SK2552C-EF相关器件

与2SK2552C-EF相关文章

您还可以找

您在本页遇到什么问题？