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2SK2230TP PDF预览

2SK2230TP

更新时间: 2024-10-02 14:46:23
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
3页 104K
描述
TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

2SK2230TP 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (ID):2 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK2230TP 数据手册

 浏览型号2SK2230TP的Datasheet PDF文件第2页浏览型号2SK2230TP的Datasheet PDF文件第3页 

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