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2SK2225 PDF预览

2SK2225

更新时间: 2024-02-18 12:10:07
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
7页 81K
描述
Silicon N Channel MOS FET

2SK2225 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
零件包装代码:TO-3PFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.18Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:675259
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-3PFM
Samacsys Released Date:2019-12-10 05:21:09Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1500 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):7 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Copper (Sn/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2225 数据手册

 浏览型号2SK2225的Datasheet PDF文件第2页浏览型号2SK2225的Datasheet PDF文件第3页浏览型号2SK2225的Datasheet PDF文件第4页浏览型号2SK2225的Datasheet PDF文件第5页浏览型号2SK2225的Datasheet PDF文件第6页浏览型号2SK2225的Datasheet PDF文件第7页 
2SK2225  
Silicon N Channel MOS FET  
REJ03G1005-0200  
(Previous: ADE-208-140)  
Rev.2.00  
Sep 07, 2005  
Application  
High speed power switching  
Features  
High breakdown voltage (VDSS = 1500 V)  
High speed switching  
Low drive current  
No Secondary breakdown  
Suitable for switching regulator, DC-DC converter  
Outline  
RENESAS Package code: PRSS0003ZA-A  
(Package name: TO-3PFM)  
D
1. Gate  
G
2. Drain  
3. Source  
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6  

2SK2225 替代型号

型号 品牌 替代类型 描述 数据表
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Silicon N Channel MOS FET

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