生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.83 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (ID): | 20 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 80 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 1150 ns | 最大开启时间(吨): | 40 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2226-01L | FUJI |
获取价格 |
N-channel MOS-FET |
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2SK2226-01S | FUJI |
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N-channel MOS-FET |
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2SK2228 | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-8M1B, 3 PIN, FET General P |
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2SK2228TP | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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2SK2229 | TOSHIBA |
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N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER |
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2SK2229_06 | TOSHIBA |
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Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic |
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2SK2229TP | TOSHIBA |
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TRANSISTOR 5 A, 60 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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2SK222C | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 600NA I(DSS) | TO-92 |
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2SK222D | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 1.2MA I(DSS) | TO-92 |
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2SK222E | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 2.5MA I(DSS) | TO-92 |
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