2SK1528STR-E

更新时间： 2024-09-25 13:00:39

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	96K
描述
Nch Single Power MOSFET 900V 4A 4000mohm LDPAK(S)-(1)/TO-263

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2SK1528STR-E 技术参数

2SK1528(L), 2SK1528(S)

Silicon N Channel MOS FET

REJ03G0951-0200

(Previous: ADE-208-1291)

Rev.2.00

Sep 07, 2005

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

No secondary breakdown

Suitable for switching regulator and DC-DC converter

Outline

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK(L))

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1))

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00 Sep 07, 2005 page 1 of 7

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
2SK1529	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
2SK1529_06	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
2SK1529_09	TOSHIBA	获取价格	High-Power Amplifier Application
2SK1529O	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 180V V(BR)DSS \| 10A I(D) \| TO-247VAR
2SK1529Y	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 180V V(BR)DSS \| 10A I(D) \| TO-247VAR
2SK1529-Y	TOSHIBA	获取价格	TRANSISTOR 10 A, 180 V, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SK1530	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
2SK1530_06	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
2SK1530_09	TOSHIBA	获取价格	High-Power Amplifier Application
2SK1530O	TOSHIBA	获取价格	High-Power Amplifier Application